InGaAs Photo Detectors
Photo Diode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity. This allows for increased flexibility and options in a variety of applications ranging from fiber optics and high speed optical communications to medical and chemical analysis.
No integrated TE (Thermal Electric) Cooling is utilized on any of our PIN Photo Diodes, thereby reducing costs and improving overall efficiency. In addition to Pin Photo Diodes, Marktech offers foundry services for epitaxial growth of SWIR wafers in the 1.0 um to 2.6um range, using InP material as the base substrate. Marktech is currently producing these high reliability wafers in 2″, 3″ and 4″ diameters.
Among the applications for these wafers are photo detectors, linear arrays and image sensors. Photo detectors processed using our epitaxial wafers provide significant advantages, including lower dark current, better shunt resistance and overall improved performance at lower operating temperatures.
Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability.
Marktech manufactured InP Pin Photo Diodes using InGaAs/InP technology have a spectral sensitivity in the 800nm to 1750nm range for applications requiring low dark current, high speed and sensitivity such as fiber optics and optical communications. In addition Marktech offers specialty photo detectors in the UV range from 150nm to 400nm. Marktech’s detector die can be placed in a variety of packages from metal can TO-5, TO-18 and TO-46 to surface mount and standard 3mm and 5mm plastic packages. We can also incorporate the detector die in custom designed assemblies.
Specialty photo detectors (GaP Schottky): UV up to the visible spectrum (150 nm – 550 nm) Optimized for UV range.
Standard photovoltaic silicon photodiodes: Have a spectral sensitivity in the 400nm to 1100nm range for applications such as Spectroscopy Equipment and sensing requiring broadband sensitivity with enhancements in the blue/green region.
Silicon Photo Transistors: for use in the 400nm to 1100 range for applications that require very high sensitivity, uniform response and increased reliability such as card readers and optical sensors.
Silicon Avalanche Photodiodes: For high speed & low light level detection in the near infrared and optimized for 800nm or 905nm peak response.
InGaAs PIN Photodiodes: 800nm – 1750nm a high sensitivity and high reliability product series, is ideally suited for Optical Communication devices.
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|Product||Photo||Active Area||Peak Wavelength||Spectral Range||Package||Buy Now||Specs|
|MTPD1346D-200||2.0 mm||1300||600-1750||TO-39 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-300||3.0 mm||1300||600-1750||TO-39 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-010||0.1 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-030||0.3 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-080||0.8 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-100||1.0 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-150||1.5 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD2600-100||1.0mm||1750||880-2600||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTD6013D3-PD||0.5 mm||1250||750-1750||3mm Plastic Flat Lens (2 pin)||Price Quote|