Photodiode chip active area sizes from 0.1 mm to 3.0 mm are available to provide the optimum balance between low dark current, high speed and light sensitivity. This allows for increased flexibility and options in a variety of applications, ranging from fiber optics and high-speed optical communications to medical and chemical analysis.
No integrated Thermal Electric (TE) Cooling is utilized on any of Marktech’s PIN photodiodes for reduced costs and improved overall efficiency. In addition to its PIN photodiodes, Marktech offers foundry services for the epitaxial growth of SWIR wafers in the 1.0 um to 2.6 um range, using InP material as the base substrate. Marktech is currently producing these high-reliability wafers in 2″, 3″ and 4″ diameters.
Among the applications for these wafers are photodetectors, linear arrays and image sensors. Photodetectors processed using our epitaxial wafers provide significant advantages, including lower dark current, better shunt resistance and improved performance at lower operating temperatures.
Marktech offers a large assortment of photodetectors, ranging from standard Silicon detectors, including photodiodes, phototransistors; avalanche photodiodes, and InP and InGaAs PIN photodiodes. Our silicon detectors have a spectral sensitivity in the range of 400 nm to 1100 nm for applications such as optical switching and sensing which require high-speed, consistency and high-reliability performance.
Marktech manufactured InP PIN photodiodes using InGaAs/InP technology have a spectral sensitivity in the 800 nm to 1750 nm range for applications requiring low dark current, high speed and sensitivity, such as fiber optics and optical communications. In addition, Marktech offers specialty photodetectors in the UV range from 150 nm to 400 nm. Marktech’s photodetector die can be placed within a variety of packages, from TO-5, TO-18 and TO-46 metal cans, to surface mount and standard 3 mm and 5 mm plastic packages. We can also incorporate the photodetector die into custom-designed assemblies.
Specialty photodetectors (GaP Schottky): UV up to the visible spectrum (150 nm – 550 nm) Optimized for UV range.
Standard photovoltaic Silicon photodiodes: Spectral sensitivity in the 400 nm to 1100 nm range for applications such as spectroscopy equipment and any light sensing application requiring broadband sensitivity with enhancements in the blue/green region.
Silicon phototransistors: Spectral sensitivity in the 400 nm to 1100 nm range, for applications requiring very high sensitivity, uniform response and increased reliability, such as card readers and optical sensors.
Silicon Avalanche Photodiodes (Si APD’s): For high speed and low light level detection in the NIR spectrum, optimized for 800 nm or 905 nm peak response.
InGaAs PIN Photodiodes: Spectral Sensitivity in the 800 nm – 1750 nm range, a high-sensitivity and high-reliability product series, ideally suited for optical communications devices.
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|Product||Photo||Active Area||Peak Wavelength||Spectral Range||Package||Buy Now||Specs|
|MTPD1346D-200||2.0 mm||1300||600-1750||TO-39 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-300||3.0 mm||1300||600-1750||TO-39 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-010||0.1 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-030||0.3 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-080||0.8 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-100||1.0 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD1346D-150||1.5 mm||1300||600-1750||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTPD2600-100||1.0mm||1750||880-2600||TO-46 Metal Can Flat Lens (3 pin)||Digikey|
|MTD6013D3-PD||0.5 mm||1250||750-1750||3mm Plastic Flat Lens (2 pin)||Digikey|