CALL: +1-518-956-2980

Buy Now

Buy Now

Buy Now

Need parts?

Buy Now

Marktech Optoelectronics Introduces New 2.6µm Extended InGaAs Photodiode Photodetectors

December 19, 2022 – Latham, NY, USA –  Marktech Optoelectronics, Inc. (, a privately-held leading designer and manufacturer of standard and custom optoelectronics, including UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters, detectors, InP epi wafers, and other compound semiconductors, today announced the release of two new indium gallium arsenide (InGaAs) photodiode photodetectors with extended 2.6µm wavelength responsivity cutoffs.

The new High Speed 2.6 micron InGaAs PIN photodiodes have sensitivity wavelength ranges of 600nm to 2600nm with active area diameters of 1.0mm. Marktech’s MTPD2601T-100 InGaAs photodiode is packaged in a TO-18 hermetic metal can with a flat lens. Our MTPD2601N-100 InGaAs component uses a TO-18 package with a domed lens. TO metal can packaging provides the highest protection against the ingress of vapor and moisture, which results in exceptionally reliable, high-lifetime InGaAs photodiode detectors.

Marktech’s new 2.6µm InGaAs photodiode detectors in a TO metal can packages available through Digikey Electronics and Mouser Electronics.
Marktech’s new 2.6µm InGaAs photodiode detectors in a TO metal can packages available through Digikey Electronics and Mouser Electronics.

Marktech’s InGaAs photodiode manufacturing partner in Japan, Optrans Corporation, is recognized as producing some of the industry’s highest integrity visible through SWIR detectors. These new products and many additional standard InGaAs photodiodes can be delivered in a few days from our distributors’ inventories, Digikey Electronics and Mouser Electronics.

In addition to standard InGaAs detectors, we can provide many additional services often required to rapidly move a project from the design to the finished product stage, such as:

  • Detector and emitter selection
  • Application and specification development
  • InGaAs photodiode customization
  • Package type selection and custom packages
  • Electro-optical testing and troubleshooting
  • Circuit and assembly design and build


InGaAs Photodiodes (InGaAs PDs)

Graph of the spectral responsivity of Marktech's new 2.6µm InGaAs photodiodes Wavelength versus responsivity
The spectral responsivity of Marktech’s new 2.6µm InGaAs photodiodes

Marktech’s lineup of advanced InGaAs photodiode detectors consists of several detector families or series based on their spectral sensitivity ranges:

  • Vis-NIR-SWIR – 600nm to 1700nm spectral sensitivity
  • NIR-SWIR-Extended SWIR – 800nm to 2600nm spectral sensitivity

While 1.7 µm and 2.6 µm are our standard offerings, Optrans can tailor the peak responsivity to wavelengths lower than 2.6µm for applications with sufficiently high annual volumes. InGaAs PIN photodiodes are available in various package types such as hermetically sealed metal cans (TO-5, TO-18, and TO-39), ceramic SAW packages, pigtail cans, 3mm molded plastic through-hole (flat lens or dome ceramic), and Marktech’s latest enhanced SMD packaging system, the hermetic ATLAS package. In addition, custom-engineered packaging to OEM specifications is available as well.

Extended InGaAs Advantages

Our InGaAs photodiodes provide high sensitivity, high speed, low noise, excellent linearity, high quantum efficiency, low-temperature coefficient of responsivity, low dark current, better shunt resistance, improved low operating temperature performance, and durability combined with an extended lifetime at a reasonable cost.

Table describing Marktech's InGaAs Photodiode characteristics - high sensitivity, high speed, low noise, excellent linearity, high quantum efficiency, low dark current, better shunt resistance, and high durability


The high sensitivity of InGaAs detectors combined with low noise characteristics (high signal/noise ratio) in the NIR and SWIR wavelengths make InGaAs highly desirable for:

  • Medical Devices and Wearables:
    • Glucose monitoring (non-contact, optical)
    • Blood alcohol monitoring
    • Exhaled breath gas analysis
    • Urinalysis
  • Spectrometry:
    • FTIR spectrometry
    • Raman spectroscopy
    • Tunable diode laser spectroscopy (TDLS)
    • Scanning or dispersive NIR spectrometry
    • Non-dispersive infrared (NDIR) spectroscopy
    • Electroluminescence and fluorescence spectrometry
    • Emerging infrared spectroscopy methods
  • Temperature and flame detection
    • Infrared pyrometry or non-contact radiation thermometers
    • Flame and spark detection and regulation
  • Moisture detection and compositional sorting
    • Moisture meters (spectrophotometric)
    • Precision agriculture
    • Food sorting and food quality instruments,
    • Plastics sorting and recycling
  • Photonics test instrumentation:
    • Coherent measurement systems
    • IR laser diode characterization and monitoring
    • Monitoring SWIR LEDs and illuminators
    • Optical power meters
  • Communication receivers in the O, L, and C bands
  • Gas sensing
  • Optical coherence tomography (OCT)


In addition, InGaAs photodiodes have more thermal stability or a lower temperature coefficient of sensitivity (< 0.1% / K) over a broader range of wavelengths than silicon. As a result, our InGaAs photodiodes are ideal as the primary detector elements in non-dispersive spectrometers (Vis-NIR-SWIR), pyrometers, and medical diagnostic devices. Furthermore, Marktech’s infrared monitoring photodiodes can measure the optical power output of NIR and SWIR lasers and light sources, a critical element in the feedback and control of laser or illuminator output.

Custom Photodetectors to OEM Specs

We have extensive capabilities to design and manufacture custom photodetectors to OEM specifications from prototype to production volumes. Our capabilities in custom photodetector engineering and the manufacturing range include custom InGaAs photodiodes (wafers, die, packaged InGaAs PDs, and assemblies). In addition, Marktech can co-package InGaAs photodiodes with emitters, filters, thermoelectric coolers (TECs), and transimpedance amplifiers (TIAs). InGaAs photodiodes from Optrans Japan and silicon photodiodes from our Simi Valley plant are assembled in the same package to produce wide spectral band detectors – (SWIR/MIR to mid UVB). This technology makes hybrid InGaAs-silicon detectors with responsivities from 250nm to 2600nm feasible.

Broadband hybrid Silicon-InGaAs photodetectors | Marktech Optoelectronics, Inc.
Marktech’s Boardband InGaAs-Silicon Photodiodes with 250nm to 1700nm responsivity


Consult with Us Today About Your Design Project

Marktech Optoelectronics and Optrans Corporation have vertically integrated capabilities to custom design and fabricate photodiode devices on wafers and then dice and package these photodiode chips with any required emitters, amplifiers, filters, and components for specific applications. This vertical integration allows Marktech to precisely control the performance and quality of the photodetectors and assemblies designed and manufactured for our customers.

Utilizing our advanced 2.6µm InGaAs photodetectors in new products under development will likely lead to breakthrough designs in many analytical instruments, medical diagnostics, and industrial sensing applications.

If you have specific technical or application questions regarding your photodetection design project or are just interested in learning more about Marktech’s InGaAs photodiodes, then please reach out to us through the following:

  • Request for information (RFI) or request for quote (RFQ) form: Contact Us


Marktech Optoelectronics Logo