The broadest line of both silicon and InGaAs detectors commercially available.
Indium Gallium Arsenide (InGaAs) PIN photodiodes are made using InGaAs/InP technology.
Cutting-edge silicon photodetectors that excel in precise detection of light ranging in wavelength from 250nm to 1100nm
Monolithic “quads” or quadrant photodiodes (QPDs) are 2 X 2 photodiode arrays with four planar diffused photodiode elements or segments.
Marktech offers a broad line of silicon photo Transistors in a variety of package types ranging from miniature metal can to ceramic packages.
Our High-Reliability Photoreflectors are sensors that contain both the LED emitter and photodetector functions within a single package.
Marktech Si APD’s offer low-level light and short pulse detections of wavelengths between 400 nm and 1100 nm.
UV detectors are offered in a variety of TO metal-can type packages from TO-18 to TO-39 with special UV glass lens to insure optimum lifetime and the least amount of material degradation
With the ability to detect light in the UV, visible, and infrared spectrums, photo detectors, photo transistors, and photodiodes are being used in increasingly more applications.
Marktech offers the broadest range of emitters commercially available ranging from 235nm to 4300nm across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
Marktech offers the broadest range of UV LEDs commercially available ranging from 235nm to 400nm including UVA, UVB, UVC, and deep UVC LEDs.
Our advanced line of visible LED products is engineered to deliver high-quality, energy-efficient lighting solutions across various applications from 400nm to 700nm..
Our NIR LED wavelength range is typically from 700nm to 1000nm, extending into wavelengths invisible to the human eye but crucial for numerous technological and scientific applications.
Our standard product offering includes wavelengths from 1020nm to 4300nm and operating currents ranging from 20mA to 350mA for high-power applications.
Our Point Source LEDs are specifically engineered for optical encoders, edge sensors, and other critical applications that demand highly focused light with minimal dispersion.
Multi-LED chips in a single package, our multiple wavelength LEDs are engineered to address a myriad of applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges
Designed to produce a highly defined red dot or reticle, facilitating accurate aiming without revealing the location to the target.
Ideally suited for applications including edge sensing, line sensing, coin bill validation, and bar code reading
Our panels are crafted to deliver uniform, vibrant illumination across a wide range of applications, from consumer electronics to industrial displays.
Crafted with the latest LED technology, these rings provide adjustable illumination to meet specific needs, ensuring optimal visibility and enhancing the quality of your projects.
As a proud CREE LED Solution Provider for over a decade, Marktech offers comprehensive engineering support, including design, binning, and material selection, alongside custom packaging options for specialized applications.
CREE LED through-hole emitters, designed for high-temperature and moisture environments with UV-resistant optical-grade epoxy, offer a range of colors for versatile applications in signage and lighting.
CREE High Brightness (HB) SMD LEDs are the brightest, most reliable architectural, video, signage, scoreboard, roadway, and specialty LEDs available today.
CREE LED’s P4 series represents a leap in LED design, combining efficiency with aesthetic versatility to meet the demands of modern lighting applications.
Marktech’s CREE LED XLamp® offerings on aluminum core starboards simplify LED integration for designers, providing a range of colors and angles on compact boards for easy testing and implementation in varied lighting applications.
Marktech Optoelectronics introduces its new product line of CREE LED die, including the EZ1350 Series Die, packaged in TO-cans (TO-18 and TO-39 outlines) designed for precision and reliability in demanding applications with protection against environmental factors like moisture and dust.
CREE LED’s Versatile InGaN-based LED chips are designed to meet diverse needs for blue, green, and white-converted LEDs.
Marktech Optoelectronics combines over 40 years of expertise in optoelectronics with a focus on customized engineering solutions, addressing specific customer needs and applications.
Custom photodiode detectors are designed to meet unique customer requirements, offering specialized performance features and cost savings through optimizations such as integrated filters, photodiode arrays, and hybridization.
Through our vertically integrated manufacturing facilities in California and Japan, we offer custom LED solutions, including packaging and optoelectrical categorization, enhancing product design and market readiness.
Multiple LED dies combined in a single package are engineered to address various applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
To succeed, you need the exact optoelectronic package custom-designed and manufactured for your application, including hermetic metal SMD, TO-can, plastic SMD, and molded through-hole packaging.
Made-to-order semiconductor chips (die) and wafers are designed and fabricated to fit your needs. Standard dies are available in specific wavelengths for high-volume production applications.
Bare and encapsulated LEDs, photodiodes, and other components are assembled on FR4, metal-cored, and flexible circuit boards, ready for production.
Learn about the latest trends, devices, and potential applications.
The latest news and announcements from Marktech Optoelectronics.
Detailed information about common uses for Marktech Optoelectronics devices.
In depth discussions on LEDs, Detectors and the science behind them.
Become familiar with common terminology and concepts for LED Devices.
List of common concepts and definitions for Photodiodes.
December 19, 2022 – Latham, NY, USA – Marktech Optoelectronics, Inc. (www.marktechopto.com)(Marktech), a privately-held leading designer and manufacturer of standard and custom optoelectronics, including UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters, detectors, InP epi wafers, and other compound semiconductors, today announced the release of two new indium gallium arsenide (InGaAs) photodiode photodetectors with extended 2.6µm wavelength responsivity cutoffs.
The new High Speed 2.6 micron InGaAs PIN photodiodes have sensitivity wavelength ranges of 600nm to 2600nm with active area diameters of 1.0mm. Marktech’s MTPD2601T-100 InGaAs photodiode is packaged in a TO-18 hermetic metal can with a flat lens. Our MTPD2601N-100 InGaAs component uses a TO-18 package with a domed lens. TO metal can packaging provides the highest protection against the ingress of vapor and moisture, which results in exceptionally reliable, high-lifetime InGaAs photodiode detectors.
Marktech’s InGaAs photodiode manufacturing partner in Japan, Optrans Corporation, is recognized as producing some of the industry’s highest integrity visible through SWIR detectors. These new products and many additional standard InGaAs photodiodes can be delivered in a few days from our distributors’ inventories, Digikey Electronics and Mouser Electronics.
In addition to standard InGaAs detectors, we can provide many additional services often required to rapidly move a project from the design to the finished product stage, such as:
InGaAs Photodiodes (InGaAs PDs)
Marktech’s lineup of advanced InGaAs photodiode detectors consists of several detector families or series based on their spectral sensitivity ranges:
While 1.7 µm and 2.6 µm are our standard offerings, Optrans can tailor the peak responsivity to wavelengths lower than 2.6µm for applications with sufficiently high annual volumes. InGaAs PIN photodiodes are available in various package types such as hermetically sealed metal cans (TO-5, TO-18, and TO-39), ceramic SAW packages, pigtail cans, 3mm molded plastic through-hole (flat lens or dome ceramic), and Marktech’s latest enhanced SMD packaging system, the hermetic ATLAS package. In addition, custom-engineered packaging to OEM specifications is available as well.
Extended InGaAs Advantages
Our InGaAs photodiodes provide high sensitivity, high speed, low noise, excellent linearity, high quantum efficiency, low-temperature coefficient of responsivity, low dark current, better shunt resistance, improved low operating temperature performance, and durability combined with an extended lifetime at a reasonable cost.
The high sensitivity of InGaAs detectors combined with low noise characteristics (high signal/noise ratio) in the NIR and SWIR wavelengths make InGaAs highly desirable for:
In addition, InGaAs photodiodes have more thermal stability or a lower temperature coefficient of sensitivity (< 0.1% / K) over a broader range of wavelengths than silicon. As a result, our InGaAs photodiodes are ideal as the primary detector elements in non-dispersive spectrometers (Vis-NIR-SWIR), pyrometers, and medical diagnostic devices. Furthermore, Marktech’s infrared monitoring photodiodes can measure the optical power output of NIR and SWIR lasers and light sources, a critical element in the feedback and control of laser or illuminator output.
Custom Photodetectors to OEM Specs
We have extensive capabilities to design and manufacture custom photodetectors to OEM specifications from prototype to production volumes. Our capabilities in custom photodetector engineering and the manufacturing range include custom InGaAs photodiodes (wafers, die, packaged InGaAs PDs, and assemblies). In addition, Marktech can co-package InGaAs photodiodes with emitters, filters, thermoelectric coolers (TECs), and transimpedance amplifiers (TIAs). InGaAs photodiodes from Optrans Japan and silicon photodiodes from our Simi Valley plant are assembled in the same package to produce wide spectral band detectors – (SWIR/MIR to mid UVB). This technology makes hybrid InGaAs-silicon detectors with responsivities from 250nm to 2600nm feasible.
Consult with Us Today About Your Design Project
Marktech Optoelectronics and Optrans Corporation have vertically integrated capabilities to custom design and fabricate photodiode devices on wafers and then dice and package these photodiode chips with any required emitters, amplifiers, filters, and components for specific applications. This vertical integration allows Marktech to precisely control the performance and quality of the photodetectors and assemblies designed and manufactured for our customers.
Utilizing our advanced 2.6µm InGaAs photodetectors in new products under development will likely lead to breakthrough designs in many analytical instruments, medical diagnostics, and industrial sensing applications.
If you have specific technical or application questions regarding your photodetection design project or are just interested in learning more about Marktech’s InGaAs photodiodes, then please reach out to us through the following:
Marktech Optoelectronics is one of the world’s leading manufacturers of UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters and photodiode detectors. The company also engineers and manufactures materials such as silicon photodetector wafers, chips, and InP epiwafers.
Marktech Optoelectronics
3 Northway Lane North
Latham, NY 12110
Fax: +1-785-4725
Email: [email protected]
