The broadest line of both silicon and InGaAs detectors commercially available.
Indium Gallium Arsenide (InGaAs) PIN photodiodes are made using InGaAs/InP technology.
Cutting-edge silicon photodetectors that excel in precise detection of light ranging in wavelength from 250nm to 1100nm
Monolithic “quads” or quadrant photodiodes (QPDs) are 2 X 2 photodiode arrays with four planar diffused photodiode elements or segments.
Marktech offers a broad line of silicon photo Transistors in a variety of package types ranging from miniature metal can to ceramic packages.
Our High-Reliability Photoreflectors are sensors that contain both the LED emitter and photodetector functions within a single package.
Marktech Si APD’s offer low-level light and short pulse detections of wavelengths between 400 nm and 1100 nm.
UV detectors are offered in a variety of TO metal-can type packages from TO-18 to TO-39 with special UV glass lens to insure optimum lifetime and the least amount of material degradation
With the ability to detect light in the UV, visible, and infrared spectrums, photo detectors, photo transistors, and photodiodes are being used in increasingly more applications.
Marktech offers the broadest range of emitters commercially available ranging from 235nm to 4300nm across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
Marktech offers the broadest range of UV LEDs commercially available ranging from 235nm to 400nm including UVA, UVB, UVC, and deep UVC LEDs.
Our advanced line of visible LED products is engineered to deliver high-quality, energy-efficient lighting solutions across various applications from 400nm to 700nm..
Our NIR LED wavelength range is typically from 700nm to 1000nm, extending into wavelengths invisible to the human eye but crucial for numerous technological and scientific applications.
Our standard product offering includes wavelengths from 1020nm to 4300nm and operating currents ranging from 20mA to 350mA for high-power applications.
Our Point Source LEDs are specifically engineered for optical encoders, edge sensors, and other critical applications that demand highly focused light with minimal dispersion.
Multi-LED chips in a single package, our multiple wavelength LEDs are engineered to address a myriad of applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges
Designed to produce a highly defined red dot or reticle, facilitating accurate aiming without revealing the location to the target.
Ideally suited for applications including edge sensing, line sensing, coin bill validation, and bar code reading
Our panels are crafted to deliver uniform, vibrant illumination across a wide range of applications, from consumer electronics to industrial displays.
Crafted with the latest LED technology, these rings provide adjustable illumination to meet specific needs, ensuring optimal visibility and enhancing the quality of your projects.
As a proud CREE LED Solution Provider for over a decade, Marktech offers comprehensive engineering support, including design, binning, and material selection, alongside custom packaging options for specialized applications.
CREE LED through-hole emitters, designed for high-temperature and moisture environments with UV-resistant optical-grade epoxy, offer a range of colors for versatile applications in signage and lighting.
CREE High Brightness (HB) SMD LEDs are the brightest, most reliable architectural, video, signage, scoreboard, roadway, and specialty LEDs available today.
CREE LED’s P4 series represents a leap in LED design, combining efficiency with aesthetic versatility to meet the demands of modern lighting applications.
Marktech’s CREE LED XLamp® offerings on aluminum core starboards simplify LED integration for designers, providing a range of colors and angles on compact boards for easy testing and implementation in varied lighting applications.
Marktech Optoelectronics introduces its new product line of CREE LED die, including the EZ1350 Series Die, packaged in TO-cans (TO-18 and TO-39 outlines) designed for precision and reliability in demanding applications with protection against environmental factors like moisture and dust.
CREE LED’s Versatile InGaN-based LED chips are designed to meet diverse needs for blue, green, and white-converted LEDs.
Marktech Optoelectronics combines over 40 years of expertise in optoelectronics with a focus on customized engineering solutions, addressing specific customer needs and applications.Â
Custom photodiode detectors are designed to meet unique customer requirements, offering specialized performance features and cost savings through optimizations such as integrated filters, photodiode arrays, and hybridization.
Through our vertically integrated manufacturing facilities in California and Japan, we offer custom LED solutions, including packaging and optoelectrical categorization, enhancing product design and market readiness.
Multiple LED dies combined in a single package are engineered to address various applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
To succeed, you need the exact optoelectronic package custom-designed and manufactured for your application, including hermetic metal SMD, TO-can, plastic SMD, and molded through-hole packaging.
Made-to-order semiconductor chips (die) and wafers are designed and fabricated to fit your needs. Standard dies are available in specific wavelengths for high-volume production applications.
Bare and encapsulated LEDs, photodiodes, and other components are assembled on FR4, metal-cored, and flexible circuit boards, ready for production.
Learn about the latest trends, devices, and potential applications.
The latest news and announcements from Marktech Optoelectronics.
Detailed information about common uses for Marktech Optoelectronics devices.
In depth discussions on LEDs, Detectors and the science behind them.
Become familiar with common terminology and concepts for LED Devices.
List of common concepts and definitions for Photodiodes.
When the LED first became commercially available, over 40 years ago, no one really paid much attention to how it was made or what it consisted of chemically. This was in part due to the fact that only a few basic types and colors were available (such as GaP – red and green, and GaAsP – yellow). Today, in order to obtain new colors, or wavelengths, and improve performance and reliability, there are many new types of chemical structures being created. Because of this, LEDsare no longer referred to strictly by their color but also by their chemical name, such as InGaAlP or GaAlAs. If the user is not familiar with LED technology or does not have a degree in chemistry and materials, this hodgepodge of letters can be very confusing. The following information is provided to help alleviate some of this confusion.
The first and primary element used in the manufacture of almost all semiconductor LED devices is gallium. Gallium is a metallic material which is found as a trace element in coal, bauxite and other minerals. The symbol for gallium is “Ga” – (atomic number 31). When combined with arsenic “As” (atomic number 33), a highly poisonous gray metallic element, at temperatures of about 4000 degrees Fahrenheit, the compound gallium arsenide “GaAs” is formed. This dark gray crystalline compound is the basis for the original semiconductor LEDs manufactured almost 40 years ago. When current/energy is applied to this material, photons or particles of light are emitted. GaAs by itself emits light in the infrared range which is not visible to the human eye, however, if another element, phosphorus (a highly reactive white or yellow, non-metallic element, occurring naturally in phosphates, with atomic number 15 and symbol “P”) is introduced, a mixed crystal of gallium aresenide phosphide “GaAsP” is formed. Depending on the proportional amount of phosphorus, light in the visible range from red to yellow is achieved.
In addition to GaAsP described above, the material combination gallium posphide “GaP” was developed. By properly doping this crystal compound, various colors could be obtained. For example, by adding zinc-oxygen to GaP, the color red is obtained. By adding nitrogen, green light is achieved. It is important to note that in almost all semiconductor LED die material, the added elements such as zinc, nitrogen, beryllium etc. are not usually specified in the general material structure acronym. All of the materials mentioned above although developed many years ago, are still widely available and in use today. (Table. 1)
In the late 1970’s, it was discovered that by adding aluminum “Al” (atomic number 13, and the most abundant metallic element in the earth’s crust) to the GaAs compound, a red color could be produced with a brightness and efficiency significantly increased over existing product. Thus, gallium aluminum arsenide “GaAlAs” was formed. Although the combination of gallium, aluminum and arsenic have been around for approximately 30 years, the actual format for the elemental configuration varies. Some manufacturers depict the compound as AlGaAs while others call it GaAlAs. Originally, many thought that the material designated first was found in greater quantities than the succeeding elements. If GaAlAs was the designation, then Ga (gallium) was the primary element in the compound. Al (aluminum) would be second and As (arsenide) would be third. This caused many users to believe that if the element order was different, each of the compounds was significantly different. This is an incorrect assumption. The order each element is placed in the compound does not follow standard chemical sequences nor is it required to do so since the exact chemical structure is not specified. GaAlAs are only the “primary” elements used in the compound. All other additional elements or dopants such as zinc or nitrogen and their exact compositions are not listed. Essentially, the only difference between GaAlAs and AlGaAs is in the way the acronym is written.
Recently, this mish-mash of letters and material types has been even further complicated by the introduction of many new compounds such as indium gallium aluminum phosphide “InGaAlP.” With the addition of indium “In” (a soft malleable silvery white metallic compound found primarily in zinc and tin ores with atomic number 49) it was found that not only would the LEDs brightness and efficiency be improved, but the actual lifetime would be significantly increased over current materials such as GaAlAs. Furthermore, with proper doping, a wide variety of colors and wavelengths can be produced. Similar to gallium aluminum arsenide, the acronym for indium gallium aluminum phosphide can be expressed in a number of ways. The two most common are InGaAlP and AlInGaP. Both forms are chemically the same material.
Elements such as (Al, Ga, and In) are called group “III” elements while (P, As, and N) are group “V” elements. Light emitting semiconductor product is typically referred to as “III-V” material derived from the periodic table. Other compounds such as silicon carbide “SiC” which combines silicon (a non-metallic element occurring extensively in the earth’s crust in silica and used for the manufacture of glass, semiconductor devices, pottery etc. with atomic number 14) and carbon (a naturally abundant non-metallic element occurring in all organic or living organisms with atomic number 6) and gallium nitride “GaN” are used in the manufacture of blue and green LEDs. The acronym for these compounds is generally consistent throughout the industry, although it could be transposed at any time.
Once a chemical compound has been established, the acronym describing that substance can be very subjective to the whims of the manufacturer or developer. It is important to note that one compound should not be misconstrued as being superior or inferior to another compound with the same chemical composition, but a different chemical order.
Marktech Optoelectronics is one of the world’s leading manufacturers of UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters and photodiode detectors. The company also engineers and manufactures materials such as silicon photodetector wafers, chips, and InP epiwafers.
Marktech Optoelectronics
3 Northway Lane North
Latham, NY 12110
Fax: +1-785-4725
Email: [email protected]
