The broadest line of both silicon and InGaAs detectors commercially available.
Indium Gallium Arsenide (InGaAs) PIN photodiodes are made using InGaAs/InP technology.
Cutting-edge silicon photodetectors that excel in precise detection of light ranging in wavelength from 250nm to 1100nm
Monolithic “quads” or quadrant photodiodes (QPDs) are 2 X 2 photodiode arrays with four planar diffused photodiode elements or segments.
Marktech offers a broad line of silicon photo Transistors in a variety of package types ranging from miniature metal can to ceramic packages.
Our High-Reliability Photoreflectors are sensors that contain both the LED emitter and photodetector functions within a single package.
Marktech Si APD’s offer low-level light and short pulse detections of wavelengths between 400 nm and 1100 nm.
UV detectors are offered in a variety of TO metal-can type packages from TO-18 to TO-39 with special UV glass lens to insure optimum lifetime and the least amount of material degradation
With the ability to detect light in the UV, visible, and infrared spectrums, photo detectors, photo transistors, and photodiodes are being used in increasingly more applications.
Marktech offers the broadest range of emitters commercially available ranging from 235nm to 4300nm across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
Marktech offers the broadest range of UV LEDs commercially available ranging from 235nm to 400nm including UVA, UVB, UVC, and deep UVC LEDs.
Our advanced line of visible LED products is engineered to deliver high-quality, energy-efficient lighting solutions across various applications from 400nm to 700nm..
Our NIR LED wavelength range is typically from 700nm to 1000nm, extending into wavelengths invisible to the human eye but crucial for numerous technological and scientific applications.
Our standard product offering includes wavelengths from 1020nm to 4300nm and operating currents ranging from 20mA to 350mA for high-power applications.
Our Point Source LEDs are specifically engineered for optical encoders, edge sensors, and other critical applications that demand highly focused light with minimal dispersion.
Multi-LED chips in a single package, our multiple wavelength LEDs are engineered to address a myriad of applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges
Designed to produce a highly defined red dot or reticle, facilitating accurate aiming without revealing the location to the target.
Ideally suited for applications including edge sensing, line sensing, coin bill validation, and bar code reading
Our panels are crafted to deliver uniform, vibrant illumination across a wide range of applications, from consumer electronics to industrial displays.
Crafted with the latest LED technology, these rings provide adjustable illumination to meet specific needs, ensuring optimal visibility and enhancing the quality of your projects.
As a proud CREE LED Solution Provider for over a decade, Marktech offers comprehensive engineering support, including design, binning, and material selection, alongside custom packaging options for specialized applications.
CREE LED through-hole emitters, designed for high-temperature and moisture environments with UV-resistant optical-grade epoxy, offer a range of colors for versatile applications in signage and lighting.
CREE High Brightness (HB) SMD LEDs are the brightest, most reliable architectural, video, signage, scoreboard, roadway, and specialty LEDs available today.
CREE LED’s P4 series represents a leap in LED design, combining efficiency with aesthetic versatility to meet the demands of modern lighting applications.
Marktech’s CREE LED XLamp® offerings on aluminum core starboards simplify LED integration for designers, providing a range of colors and angles on compact boards for easy testing and implementation in varied lighting applications.
Marktech Optoelectronics introduces its new product line of CREE LED die, including the EZ1350 Series Die, packaged in TO-cans (TO-18 and TO-39 outlines) designed for precision and reliability in demanding applications with protection against environmental factors like moisture and dust.
Marktech Optoelectronics combines over 40 years of expertise in optoelectronics with a focus on customized engineering solutions, addressing specific customer needs and applications.
Custom photodiode detectors are designed to meet unique customer requirements, offering specialized performance features and cost savings through optimizations such as integrated filters, photodiode arrays, and hybridization.
Through our vertically integrated manufacturing facilities in California and Japan, we offer custom LED solutions, including packaging and optoelectrical categorization, enhancing product design and market readiness.
Multiple LED dies combined in a single package are engineered to address various applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
To succeed, you need the exact optoelectronic package custom-designed and manufactured for your application, including hermetic metal SMD, TO-can, plastic SMD, and molded through-hole packaging.
Made-to-order semiconductor chips (die) and wafers are designed and fabricated to fit your needs. Standard dies are available in specific wavelengths for high-volume production applications.
Bare and encapsulated LEDs, photodiodes, and other components are assembled on FR4, metal-cored, and flexible circuit boards, ready for production.
Learn about the latest trends, devices, and potential applications.
The latest news and announcements from Marktech Optoelectronics.
Detailed information about common uses for Marktech Optoelectronics devices.
In depth discussions on LEDs, Detectors and the science behind them.
Become familiar with common terminology and concepts for LED Devices.
List of common concepts and definitions for Photodiodes.
The characteristics of an LED lamp change according to the chip temperature (Tj: the temperature of the junction emitting the light). The chip temperature includes both the ambient temperature and the heat emitted by the LED itself.
The following text describes typical changes in the characteristics.
The amount of light emitted by the LED lamp diminishes as Tj rises. This is because of an increase in the recombination of holes and electrons that make no contribution to light emission.
Toshiba’s LED lamp technical data shows graphs of the characteristics of the luminous intensity relative to the case temperature (where the luminous intensity is standardized to 1.0 at 25°C – see Appendix 1).
Within the guaranteed operating temperature range, the luminous intensity Varies from 0.7 to 1.2 (based on luminous intensity of 1.0 at 25°C)
Like the luminous intensity, the emitted wavelength also changes, mainly due to changes in the semiconductor energy gap caused by changes in temperature. The extent of the changes in the wavelength varies according to the semiconductor material; in InGaAlP-type LEDs, a rise in temperature causes d to change by about 0.1 nm /°C. For applications where strict wavelength standards are required, any change in wavelength within the guaranteed operating temperature range of equipment must be taken into consideration.
Except for special cases, changes in the Vf, like changes in the emitted wavelength, are caused by changes in the semiconductor energy gap. As the temperature rises, Vf falls by about 2 mV/°C. Change in Vf is a major consideration in circuit design. Where the LED lamp operates on constant current, changes in Vf do not affect the circuit constants. However, where the LED lamp operates at a roughly constant voltage, Vf falls as the temperature rises and the current increases. An increase in the current causes Tj to rise still further and Vf to fall further. The current continues increasing until a balance is reached. Conversely, at low temperatures Vf rises and the current falls. The luminous intensity required may not be obtained when the circuit is operated at a constant voltage.
Variation in characteristics values between different LEDs arises at the manufacturing stage. Toshiba specifies a minimum value for the luminosity and a minimum or maximum value for each of the electrical characteristic parameters. Hence, optical circuits must be designed taking these fluctuations in to account. For example, in addition to changes in the temperature, Vf also has a certain distribution. When a circuit has no built-in design margin, devices with a large Vf fluctuation must be checked so as to ensure that the desired characteristics can still be obtained when the temperature changes. Depending on the characteristic of the circuit or equipment, it may be necessary to restrict the amount of fluctuation in the LED lamp characteristic values. In such cases, Toshiba will investigate there is a need for a special standard and decide whether or not a special standard can be applied.
LED lamps are emitters of visible light. Hence, LED standards are based on light visible to humans. Accordingly, Marktech does not recommend using a visible LED as the light source for an optical sensor. Relative efficiency Figure 6 shows the luminous efficiency curve, featuring the wavelength characteristics of light to which the human eye is sensitive. The human eye is most sensitive to light with a wavelength of approximately 555 nm. When the luminosity of an LED is measured, the value of the luminosity at each wavelength must be corrected according to the luminous efficiency curve shown in Figure 6.
Figure 6 – Luminous efficiency curve
Either use the luminous efficiency curve to correct the LEDs’ output for each wavelength to be measured or pass the LEDs’ output to be measured through an optical filter with the same transmission characteristics as the luminous efficiency curve. Naturally, it is also necessary to take into account the wavelength characteristics of the photodetector. Photodiodes or CCD image sensors are sometimes used in photodetectors for checking luminosity. In these cases, the difference between the luminosity of visible LEDs is not simply due to the differences in the sensitivity of their photodetectors. For example, a simple comparison between the luminous intensity of a 660-nm GaA As LED and that of a 570-nm InGaAlP LED shows that the latter has a luminous intensity than the former. However, taking into account the wavelength characteristics of the reception sensitivity of photodetectors with photodiodes or CCD image sensors, the 660-nm GaAlAs LED has the higher output. In addition, the wavelength characteristic diagram in the technical data shows only the visible light spectrum and does not indicate that no other light is emitted from the LED. In particular, depending on the type of LED, the emission may have a large peak in the near-infrared area. When using photodiodes to measure luminosity, do not forget to take infrared light into account.
Marktech Optoelectronics is one of the world’s leading manufacturers of UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters and photodiode detectors. The company also engineers and manufactures materials such as silicon photodetector wafers, chips, and InP epiwafers.
Marktech Optoelectronics
3 Northway Lane North
Latham, NY 12110
Fax: +1-785-4725
Email:
in**@ma**********.com