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Marktech and Optrans Expand Quad InGaAs Photodiode Portfolio from 1.7 µm to 2.6 µm

Monolithic four-quadrant and assembled four-discrete-element architectures in TO-can and surface-mount package options for laser beam positioning, optical alignment, and extended-infrared sensing.

1.7 micron InGaAs quadrant photodiode - monolithic architecture.
Image of 2.6 micron InGaAs quadrant photodiode - assembled architecture.
2.6 micron InGaAs quadrant photodiode - assembled architecture.

LATHAM, NY – October 13, 2026 –

Marktech Optoelectronics and Optrans America Corporation today announced an expanded portfolio of four-channel indium gallium arsenide (InGaAs) PIN photodiodes for optical systems requiring both infrared detection and positional information. Combining conventional 1.7 µm-cut-off and extended 2.6 µm-cut-off InGaAs technologies, the portfolio gives optical system designers more options for laser alignment, beam tracking, optical feedback, and analytical instrumentation.

The lineup includes two distinct detector architectures: a 1.7 µm-cut-off monolithic quadrant photodiode, one InGaAs die divided into four sensing segments, and a 2.6 µm-cut-off assembled four-element detector, four discrete extended-InGaAs photodiode chips arranged in a 2 × 2 pattern. Both configurations provide four separately readable detection channels, allowing external electronics to compare incident optical power across the sensing regions.

Four Channels for Position Sensing and Optical Feedback

Optical alignment systems must determine not only how much light reaches a detector, but also where the beam is positioned. By comparing signals from four sensing regions, system electronics can determine horizontal and vertical beam displacement and generate feedback for beam centering, tracking, or pointing correction. For applications that require position information rather than a complete image, quadrant detection can also simplify signal processing compared with imaging-based approaches.

The expanded portfolio brings this four-channel detection approach to a broader selection of infrared systems. Designers can select a monolithic quadrant for conventional InGaAs wavelengths or an assembled extended-InGaAs configuration for operation beyond the 1.7 µm wavelength Cut-off.

Two Architectures for Infrared Detection

1.7 µm-Cut-off Monolithic Quad InGaAs Photodiodes (600 nm to 1750 nm)

Monolithic architecture integrates four sensing quadrants on a single InGaAs PIN photodiode die, providing a compact detector geometry for two-axis optical position sensing. Representative devices offer spectral sensitivity from 600 nm to 1750 nm, with package options including a TO-5 metal can (MTPD4346T38-300) and a 7.24 × 7.24 mm surface-mount package (MTSM1346SMF3-SP4-030).

These configurations support integration into precision optical instruments, industrial sensing assemblies, and compact electronics. The award-winning, proprietary ATLAS seam-welded surface-mount packaging provides a very compact, hermetic alternative to traditional TO-can integration within Marktech’s broader InGaAs packaging portfolio.

2.6 µm-Cut-off Four-Element Extended-InGaAs Photodiodes

The extended-wavelength architecture uses four separate extended-InGaAs photodiode chips, rather than a single segmented die. Arranged in a square 2 × 2 geometry within a common package, the elements provide independent signals for four-area optical measurements.

Representative configurations offer spectral sensitivity from 800 nm to 2600 nm, extending detection beyond conventional 1.7 µm-Cut-off InGaAs. Compact surface-mount options include 5.0 × 5.0 mm (MTSM2601SMF2-SP4-030) and 7.24 × 7.24 mm (MTSM2601SMF3-SP4-100) formats for longer-wavelength beam monitoring, optical alignment, and infrared instrumentation.

The two architectures give designers different choices in sensing geometry and mechanical integration. Selection should consider the operating wavelength, beam diameter, active-area arrangement, inter-element spacing, and readout requirements rather than treating the monolithic and assembled configurations as interchangeable.

Product Family and Package Options

The expanded portfolio includes the following spectral ranges and package formats.

Feature

1.7 µm-Cut-off Monolithic Quad

2.6 µm-Cut-off Four-Element Detector

Detector architecture

One InGaAs die divided into four sensing quadrants

Four discrete extended-InGaAs chips arranged in a 2 × 2 pattern

Detection channels

Four separately readable channels

Four separately readable channels

Representative spectral sensitivity

600–1750 nm

800–2600 nm

Package options

TO-5 metal can; 7.24 × 7.24 mm seam-welded surface mount

5.0 × 5.0 mm and 7.24 × 7.24 mm surface mount

Primary design value

Compact monolithic quadrant detection for optical positioning and alignment

Four-channel infrared detection extending to the 2.6 µm wavelength Cut-off

Wavelength Cut-off (1.7 and 2.6 micron) identifies InGaAs detector families. Base final device selection on the applicable product specifications, application requirements, and package drawings.

Applications Across Precision Optics, Communications, and Infrared Analysis

Laser alignment and precision positioning. Target applications include automatic beam centering, optical tracking, autocollimators, stage positioners, surface profilometers, scanning probe microscopes, atomic force microscopes (AFMs), optical tweezers, and displacement or tilt measurement systems. These applications build on Marktech’s established quadrant and photodiode-array capabilities for optical position sensing.

Optical communications and industrial sensing. Four-channel InGaAs detectors support alignment and tracking in free-space optical communications, as well as infrared laser monitoring, LiDAR, optical ranging, and industrial position-sensing systems. The appropriate detector configuration depends on the system’s wavelength, signal level, and response requirements.

Extended-infrared analytical instrumentation. The 2.6 µm cut-off configurations broaden options for spectroscopy, spectrophotometry, gas and process analysis, moisture measurement, radiometry, and non-contact temperature measurement within the detector’s spectral response range. These applications can use separate channels for spatial comparison or application-specific optical measurement arrangements.

Additional target applications include tunable diode laser spectroscopy (TDLS), flame monitoring and control, and longer-wavelength infrared laser monitoring, subject to the optical and electrical requirements of the individual instrument.

Custom Detectors, Packaging, and OEM Integration

Marktech and Optrans support customer-specific detector development and packaging, drawing on capabilities that include semiconductor device design, wafer fabrication, die processing, and multi-element assembly. Custom configurations can address optical geometry, package dimensions, pin assignments, and integration with other components. Marktech’s established custom-detector capabilities also include co-packaging photodiodes with emitters, optical filters, and transimpedance amplifiers.

Beyond four-element detectors, Marktech can design, fabricate, and package custom linear and two-dimensional silicon and InGaAs photodiode arrays for instruments requiring additional sensing channels. Optrans supports collaborative development, sample evaluation, assembly, and testing through to production, allowing customers to assess a proposed configuration against their application requirements. Marktech can combine multiple silicon and InGaAs PIN photodiodes in the same package provide an extremely broad detection range, 250 to 2600 nm, such as our MTPD2601SIW-100 multi-detector device.

Image of MT03-041 - • Dual-chip silicon-InGaAs detectors providing ultra-broadband spectral coverage from 250 to 2600 nm—ideal for comprehensive spectroscopic analysis.

Our MTPD2601SIW-100 multi-detector combines multiple silicon and InGaAs PIN photodiodes in the same package for an extremely broad detection range, 250 to 2600 nm.

Continued Portfolio Development

Marktech, working with its manufacturing partner Optrans Corporation, plans to continue expanding its InGaAs photodiode portfolio with additional detector sizes, wavelength ranges, package formats, and customer-specific multi-element solutions.

By combining monolithic 1.7 µm-cut-off quadrant detectors with assembled extended-InGaAs configurations reaching 2.6 µm cut-off, the companies aim to give optical system designers greater flexibility in wavelength selection, four-channel sensing, and mechanical integration.

For product selection, technical specifications, pricing, and custom-development inquiries, contact Marktech Optoelectronics at +1 518-956-2980 or send us your questions and inquiries here:
https://marktechopto.com/contact/

See all of our Quadrant & Array Photodiodes.
See all of our InGaAs PIN Photodiodes.
See all of our Silicon PIN Photodiodes.

About Marktech Optoelectronics

Founded in 1985, Marktech Optoelectronics, Inc. (www.marktechopto.com) (Marktech) is a privately held joint venture of Optrans Corporation and Marktech International. Marktech is a top designer, low-to-mid volume packager, and manufacturer of silicon photodiodes, as well as a value-added distributor of custom optoelectronics, including UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters, MWIR LEDs, detectors, InP epi wafers, and other compound semiconductors. Headquartered in Latham, NY, Marktech operates extensive optical and electrical testing laboratories to fully characterize detectors and emitters and pioneered tight sorting for LED peak wavelength and output power—still essential for many medical diagnostic applications.
https://marktechopto.com/

About Optrans Corporation

Optrans Corp. (optrans.com/) (Optrans), is a private, leading manufacturer of optoelectronic components, delivering high-performance solutions across the UV, visible, and infrared spectra. With fully integrated in-house manufacturing – from epiwafer growth to die fabrication to optical design, assembly, and advanced packaging – Optrans ensures precision, quality, and flexibility. The Optrans product lineup includes UV, visible, and IR LEDs (NIR, SWIR, MWIR), point-source LEDs, photodiodes, photo-reflectors, and phototransistors, all engineered for demanding applications that require spectral accuracy, thermal management, and long-term reliability. Headquartered in Kawasaki City, Optrans collaborates closely with manufacturing companies in Japan, Asia, Europe, and the United States and excels at providing consistent support from component development through module implementation and system integration.
https://optrans.com/

Media Contact:
Gary J. Kardys
Chief Marketing Officer (CMO)
  [email protected]

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