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High Brightness LEDs

Marktech manufactured InP PIN photodiodes using InGaAs/InP technology have a spectral sensitivity in the 600nm to 2600nm range for applications requiring low dark current, high speed, and sensitivity, such as fiber optics, optical communications and medical imaging.

Marktech’s lineup of advanced InGaAs photodiode detectors consists of two detector families or series based on their spectral sensitivity ranges:

Near IR Scan of a Cancer Cell

InGaAs PIN Photodiode

Product Photo DWL Color Intensity m2 Angle Dimensions Lens Type Buy Now Specs
MT112TB-RG-A Red .7 mcd Digikey
Mouser
MT1403-RG-A 650 Red 5 mcd 35 3mm Round Digikey
Mouser
MT2030-HRG-A 572 / 626 Green / Red 7 mcd / 9 mcd 118 3mm Round Digikey
Mouser
MT2118-G-A 572 Green 17 mcd 35 5mm Round Digikey
Mouser
MT212TB-G-A 572 Green 10 mcd 120 Rectangular Rectangular Digikey
Mouser
MT240-G-A 572 Green 16 mcd 60 3mm Round Digikey
Mouser
MT3118-Y-A 590 Amber 27.5 mcd 35 5mm Round Digikey
Mouser
MT4118-HR-A 629 Red 35 mcd 35 5mm Round Digikey
Mouser
MT5470-BL 470 Blue 950 mcd 55/35 5mm Oval Digikey
MT5470-UG 525 Green 2800 mcd 55/35 5mm Oval Digikey
MT5470A-LWT 4500-5500 Cool White 3500 mcd 70/40 5mm Oval Digikey
MT5470D-UY 589 Amber 2000 mcd 70/40 5mm Oval Digikey
Mouser
MT5470E-OR 605 Orange 3000 mcd 60/40 5mm Oval Digikey
MT5470E-UR 625 Red 2300 mcd 70/40 5mm Oval Digikey
Mouser
MT6224B-AHRG-A 570 / 639 Green / Red 20 mcd / 20 mcd 70 5mm Round Digikey
Mouser
MT7118B-UR-A 640 Red 150 mcd 35 5mm Round Price Quote

Product Information

Photodiode chip active area sizes from 0.1 mm to 3.0 mm enable the optimal selection of low dark current, high speed, light sensitivity, and other detector characteristics for specific applications. InGaAs photodiode applications include fiber optics and free-space optical communications, medical diagnostics (glucose and blood gas), NIR-SWIR monitoring, IR laser alignment, infrared position sensing, spectroscopy, chromatography, and chemical analysis.

No integrated Thermal Electric (TE) Cooling is utilized or required on any of Marktech’s standard PIN photodiodes for reduced costs and improved overall efficiency. However, TE coolers, transimpedance amplifiers (TIAs), and other components can be custom packaged with our InGaAs detectors for special applications.

In addition to its InGaAs PIN photodiodes, Marktech offers foundry services for the epitaxial growth of SWIR wafers in the 1.0 um to 2.6 um range, using InP material as the base substrate. Marktech is currently producing these high-reliability wafers in 2″, 3″, and 4″ diameters. Among the applications for these wafers are photodetectors, linear arrays, and image sensors. Photodetectors processed using our epitaxial wafers provide significant advantages, including lower dark current, better shunt resistance, and improved performance at lower operating temperatures.

InGaAs PIN photodiodes are available in various package types such as hermetically sealed metal cans (TO-5, TO-18, TO-39, and TO-46), ceramic SAW packages, pigtail metal cans, 3mm molded plastic through-hole (flat lens or dome ceramic), and Marktech’s latest enhanced packaging system – the seam welded surface mount device (SMD) ATLAS package. InGaAs detectors in our hermetic ATLAS package have superior protection against oxygen and moisture ingress. The compact SMD form factor is highly suited to high-volume manufacturing. In addition, the low profile of ATLAS packaged InGaAs detectors is useful in wearable applications. We can also incorporate the photodetector die into custom-designed assemblies.

In addition to InGaAs infrared detectors, Marktech offers a range of standard silicon detectors such as photodiodes (SiPDs), phototransistors, and avalanche photodiodes. Our silicon detectors have a spectral sensitivity of 400 nm to 1100 nm for optical switching, Vis-NIR sensing, position sensing, laser alignment, light & laser monitoring, spectroscopy, oximetry, and other applications requiring high-speed, consistent, and high-reliability performance.

Standard photovoltaic Silicon photodiodes

Spectral sensitivity in the 400nm to 1100nm range for applications such as spectroscopy equipment and any light sensing application requiring broadband sensitivity with enhancements in the blue/green region. UV enhanced silicon photodiode has some sensitivity down to 254nm.

Silicon phototransistors

Spectral sensitivity in the 400nm to 1100nm range for applications requiring very high sensitivity, uniform response, and increased reliability, such as card readers and optical sensors.

Silicon Avalanche Photodiodes (Si APD’s)

For high speed and low light level detection in the NIR spectrum, optimized for 800nm or 905nm peak response.

InGaAs PIN Photodiodes

High-sensitivity and high reliability with spectral sensitivity in the 600nm – 2600nm range. Our InGaAs detectors are ideally suited for medical diagnostics, chemical analysis, position sensing, Vis-NIR-SWIR broadband sensing, and optical communications devices.

InGaAs-Silicon Dual Diodes

Spectral sensitivity from 254nm to 2600nm depending on specific InGaAs and silicon photodiodes placed in the same package.

Additional Resources

Spectral sensitivity from 254nm to 2600nm depending on specific InGaAs and silicon photodiodes placed in the same package.

Need Parts?

Do you need a small number of LEDs for your proof of concept? Or, are you looking to purchase a run for your prototypes? Visit our online stores at Digi-Key Electronics and Mouser Electronics today. In Japan, our products are now available through Rikei Corporation. In Israel, our products are now available through Militram. In Canada, our products are now available through ARL Group.

Need Assistance?

Let us help select the perfect parts and services to make your application come to life.

Near IR Scan of a Cancer Cell

InGaAs PIN Photodiode

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