Happy New Year’s Wishes from the Marktech Optoelectronics team!
If you are attending SPIEPhotonics West in January, then stop by our booth (#239) from January 30 thru February 3 at the Moscone Center in San Francisco, California. SPIE Photonics Westis the world-renowned event for the photonics, optics, emitters, and detectors field.
Marktech Optoelectronics will be showcasing both their well-established and newly released products and capabilities, such as:
One of Several New 2.6µm InGaAs PIN Photodiode Innovations Launching in 2023.
Marktech Optoelectronics, Inc. (www.marktechopto.com)(Marktech), is a privately-held and veteran-owned leading designer and manufacturer of standard and custom optoelectronics, including UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters, detectors, InP epi wafers, and other compound semiconductors.
Please drop by our booth or contact us any time if you:
Have any technical or application questions or need assistance regarding any of your optoelectronic design projects
Require validation of the optical characteristics (wavelength, power output, sensitivity) of your current optoelectronics components (emitters or detectors)
Are you interested in learning more about Marktech’s cutting-edge InGaAs SWIR detectors, SWIR LED emitters, ATLAS hermetic SMD packaging, silicon photodetectors, chip-scale packaging (CSP), or multi-wavelength & multi-chip (MWMC) packaging
Want to schedule a time to consult with our engineering experts at the Photonic West
If you have an urgent project or component questions: Contact Us.
Marktech’s New Extended 2.6µm Cutoff InGaAs Photodiode Photodetectors.
December 19, 2022 – Latham, NY, USA – Marktech Optoelectronics, Inc. (www.marktechopto.com)(Marktech), a privately-held leading designer and manufacturer of standard and custom optoelectronics, including UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters, detectors, InP epi wafers, and other compound semiconductors, today announced the release of two new indium gallium arsenide (InGaAs) photodiode photodetectors with extended 2.6µm wavelength responsivity cutoffs.
The new High Speed 2.6 micron InGaAs PIN photodiodes have sensitivity wavelength ranges of 600nm to 2600nm with active area diameters of 1.0mm. Marktech’s MTPD2601T-100 InGaAs photodiode is packaged in a TO-18 hermetic metal can with a flat lens. Our MTPD2601N-100 InGaAs component uses a TO-18 package with a domed lens. TO metal can packaging provides the highest protection against the ingress of vapor and moisture, which results in exceptionally reliable, high-lifetime InGaAs photodiode detectors.
Marktech’s InGaAs photodiode manufacturing partner in Japan, Optrans Corporation, is recognized as producing some of the industry’s highest integrity visible through SWIR detectors. These new products and many additional standard InGaAs photodiodes can be delivered in a few days from our distributors’ inventories, Digikey Electronics and Mouser Electronics.
In addition to standard InGaAs detectors, we can provide many additional services often required to rapidly move a project from the design to the finished product stage, such as:
Vis-NIR-SWIR – 600nm to 1700nm spectral sensitivity
NIR-SWIR-Extended SWIR – 800nm to 2600nm spectral sensitivity
While 1.7 µm and 2.6 µm are our standard offerings, Optrans can tailor the peak responsivity to wavelengths lower than 2.6µm for applications with sufficiently high annual volumes. InGaAs PIN photodiodes are available in various package types such as hermetically sealed metal cans (TO-5, TO-18, and TO-39), ceramic SAW packages, pigtail cans, 3mm molded plastic through-hole (flat lens or dome ceramic), and Marktech’s latest enhanced SMD packaging system, the hermetic ATLAS package. In addition, custom-engineered packaging to OEM specifications is available as well.
Extended InGaAs Advantages
Our InGaAs photodiodes provide high sensitivity, high speed, low noise, excellent linearity, high quantum efficiency, low-temperature coefficient of responsivity, low dark current, better shunt resistance, improved low operating temperature performance, and durability combined with an extended lifetime at a reasonable cost.
The high sensitivity of InGaAs detectors combined with low noise characteristics (high signal/noise ratio) in the NIR and SWIR wavelengths make InGaAs highly desirable for:
Medical Devices and Wearables:
Glucose monitoring (non-contact, optical)
Blood alcohol monitoring
Exhaled breath gas analysis
Tunable diode laser spectroscopy (TDLS)
Scanning or dispersive NIR spectrometry
Non-dispersive infrared (NDIR) spectroscopy
Electroluminescence and fluorescence spectrometry
Emerging infrared spectroscopy methods
Temperature and flame detection
Infrared pyrometry or non-contact radiation thermometers
Flame and spark detection and regulation
Moisture detection and compositional sorting
Moisture meters (spectrophotometric)
Food sorting and food quality instruments,
Plastics sorting and recycling
Photonics test instrumentation:
Coherent measurement systems
IR laser diode characterization and monitoring
Monitoring SWIR LEDs and illuminators
Optical power meters
Communication receivers in the O, L, and C bands
Optical coherence tomography (OCT)
In addition, InGaAs photodiodes have more thermal stability or a lower temperature coefficient of sensitivity (< 0.1% / K) over a broader range of wavelengths than silicon. As a result, our InGaAs photodiodes are ideal as the primary detector elements in non-dispersive spectrometers (Vis-NIR-SWIR), pyrometers, and medical diagnostic devices. Furthermore, Marktech’s infrared monitoring photodiodes can measure the optical power output of NIR and SWIR lasers and light sources, a critical element in the feedback and control of laser or illuminator output.
Custom Photodetectors to OEM Specs
We have extensive capabilities to design and manufacture custom photodetectors to OEM specifications from prototype to production volumes. Our capabilities in custom photodetector engineering and the manufacturing range include custom InGaAs photodiodes (wafers, die, packaged InGaAs PDs, and assemblies). In addition, Marktech can co-package InGaAs photodiodes with emitters, filters, thermoelectric coolers (TECs), and transimpedance amplifiers (TIAs). InGaAs photodiodes from Optrans Japan and silicon photodiodes from our Simi Valley plant are assembled in the same package to produce wide spectral band detectors – (SWIR/MIR to mid UVB). This technology makes hybrid InGaAs-silicon detectors with responsivities from 250nm to 2600nm feasible.
Consult with Us Today About Your Design Project
Marktech Optoelectronics and Optrans Corporation have vertically integrated capabilities to custom design and fabricate photodiode devices on wafers and then dice and package these photodiode chips with any required emitters, amplifiers, filters, and components for specific applications. This vertical integration allows Marktech to precisely control the performance and quality of the photodetectors and assemblies designed and manufactured for our customers.
Utilizing our advanced 2.6µm InGaAs photodetectors in new products under development will likely lead to breakthrough designs in many analytical instruments, medical diagnostics, and industrial sensing applications. If you have specific technical or application questions regarding your photodetection design project or are just interested in learning more about Marktech’s InGaAs photodiodes, then please reach out to us through the following:
Request for information (RFI) or request for quote (RFQ) form: Contact Us