The broadest line of both silicon and InGaAs detectors commercially available.
Indium Gallium Arsenide (InGaAs) PIN photodiodes are made using InGaAs/InP technology.
Cutting-edge silicon photodetectors that excel in precise detection of light ranging in wavelength from 250nm to 1100nm
Monolithic “quads” or quadrant photodiodes (QPDs) are 2 X 2 photodiode arrays with four planar diffused photodiode elements or segments.
Marktech offers a broad line of silicon photo Transistors in a variety of package types ranging from miniature metal can to ceramic packages.
Our High-Reliability Photoreflectors are sensors that contain both the LED emitter and photodetector functions within a single package.
Marktech Si APD’s offer low-level light and short pulse detections of wavelengths between 400 nm and 1100 nm.
UV detectors are offered in a variety of TO metal-can type packages from TO-18 to TO-39 with special UV glass lens to insure optimum lifetime and the least amount of material degradation
With the ability to detect light in the UV, visible, and infrared spectrums, photo detectors, photo transistors, and photodiodes are being used in increasingly more applications.
Marktech offers the broadest range of emitters commercially available ranging from 235nm to 4300nm across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
Marktech offers the broadest range of UV LEDs commercially available ranging from 235nm to 400nm including UVA, UVB, UVC, and deep UVC LEDs.
Our advanced line of visible LED products is engineered to deliver high-quality, energy-efficient lighting solutions across various applications from 400nm to 700nm..
Our NIR LED wavelength range is typically from 700nm to 1000nm, extending into wavelengths invisible to the human eye but crucial for numerous technological and scientific applications.
Our standard product offering includes wavelengths from 1020nm to 3000nm and operating currents ranging from 20mA to 350mA for high-power applications.
Our Point Source LEDs are specifically engineered for optical encoders, edge sensors, and other critical applications that demand highly focused light with minimal dispersion.
Multi-LED chips in a single package, our multiple wavelength LEDs are engineered to address a myriad of applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges
Designed to produce a highly defined red dot or reticle, facilitating accurate aiming without revealing the location to the target.
Ideally suited for applications including edge sensing, line sensing, coin bill validation, and bar code reading
Our panels are crafted to deliver uniform, vibrant illumination across a wide range of applications, from consumer electronics to industrial displays.
Crafted with the latest LED technology, these rings provide adjustable illumination to meet specific needs, ensuring optimal visibility and enhancing the quality of your projects.
As a proud CREE LED Solution Provider for over a decade, Marktech offers comprehensive engineering support, including design, binning, and material selection, alongside custom packaging options for specialized applications.
CREE LED through-hole emitters, designed for high-temperature and moisture environments with UV-resistant optical-grade epoxy, offer a range of colors for versatile applications in signage and lighting.
CREE High Brightness (HB) SMD LEDs are the brightest, most reliable architectural, video, signage, scoreboard, roadway, and specialty LEDs available today.
CREE LED’s P4 series represents a leap in LED design, combining efficiency with aesthetic versatility to meet the demands of modern lighting applications.
Marktech’s CREE LED XLamp® offerings on aluminum core starboards simplify LED integration for designers, providing a range of colors and angles on compact boards for easy testing and implementation in varied lighting applications.
Marktech Optoelectronics introduces its new product line of CREE LED die, including the EZ1350 Series Die, packaged in TO-cans (TO-18 and TO-39 outlines) designed for precision and reliability in demanding applications with protection against environmental factors like moisture and dust.
Marktech Optoelectronics combines over 40 years of expertise in optoelectronics with a focus on customized engineering solutions, addressing specific customer needs and applications.Â
Custom photodiode detectors are designed to meet unique customer requirements, offering specialized performance features and cost savings through optimizations such as integrated filters, photodiode arrays, and hybridization.
Through our vertically integrated manufacturing facilities in California and Japan, we offer custom LED solutions, including packaging and optoelectrical categorization, enhancing product design and market readiness.
Multiple LED dies combined in a single package are engineered to address various applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
To succeed, you need the exact optoelectronic package custom-designed and manufactured for your application, including hermetic metal SMD, TO-can, plastic SMD, and molded through-hole packaging.
Made-to-order semiconductor chips (die) and wafers are designed and fabricated to fit your needs. Standard dies are available in specific wavelengths for high-volume production applications.
Bare and encapsulated LEDs, photodiodes, and other components are assembled on FR4, metal-cored, and flexible circuit boards, ready for production.
Learn about the latest trends, devices, and potential applications.
The latest news and announcements from Marktech Optoelectronics.
Detailed information about common uses for Marktech Optoelectronics devices.
In depth discussions on LEDs, Detectors and the science behind them.
Become familiar with common terminology and concepts for LED Devices.
List of common concepts and definitions for Photodiodes.
The defined area within a photodiode that is diffused to create a PN or NP junction that can convert photons into current. Active areas can be any shape and can vary in size from less than a mm2 to over a cm2.
An avalanche photodiode (APD) is a light sensitive semiconductor device that exploits the photoelectric effect to convert light to electricity. APDs are photodetectors that provide a built-in first stage of gain through avalanche multiplication. By applying a high reverse bias voltage, typically 100 – 200V for silicon based APD’s, an APD will produce an internal current gain effect (usually specified at 100X) due to impact ionization (avalanche effect).
The frequency of a square wave input light signal at which the output current of a photodiode, having been converted to an output voltage by a load resistor or amplifier, is reduced to -3dB (70%) of its output in a low frequency mode. Bandwidth (B) is related to rise time (tr) by the formula: B = 0.35 / tr
The level of reverse bias voltage at which the photodiode’s dark current transitions from small incremental increases with increased voltage to a large increase. Commonly specified as the reverse bias voltage required to cause a dark current greater than 10 μA. Substantial operation above this point can cause damage to the photodiode.
The level of incoming optical power that can irreversibly damage the photodiode. This level occurs after the saturation point.
The reverse current that flows in a photodiode in the dark (total absence of light), when a reverse bias voltage is applied. Dark current increases with increasing temperature. Also referred to as leakage current.
The range of input light intensities (specified in watts) over which the photodiode’s responsivity remains linear within a specified linearity value (specified in %). (See Linearity below). Dynamic Range values vary based on a photodiode’s substrate resistivity (higher resistivity = reduced Dynamic Range) and reverse bias voltage (higher bias voltage = improved Dynamic Range).
The time required for the output current of an illuminated photodiode to fall from 90% to 10% of its initial “on” level in response to an “off” level in input light power. Accurate measurement requires the light source turning on and off be faster than the photodiode.
An optical component which passes or blocks certain wavelengths. Filters can be glass, epoxy, plastic, thin film coatings and may be applied directly to the photodiode’s surface or placed above it.
The GBP is the frequency bandwidth of an operational amplifier with a gain of 1. As the gain (equal to the feedback resistance in most circuits) increases from 1, the bandwidth of the op-amp decreases, as the GBP remains a constant.
Amount of light falling on the detector’s active area, measured in watts per square centimeter (also called Irradiance or flux).
A photodiode built on InGaAs which is produced on an InP substrate. Polarity is P on N. It can respond to wavelengths from 800nm to 2600nm depending of fabrication enhancements.
The measure of the ability of the photodiode to store an electric charge. Junction capacitance varies with the photodiode’s substrate resistivity (higher resistivity = lower capacitance), reverse bias voltage (higher bias voltage = lower capacitance), and active area size (larger active area = higher capacitance).
A measure of the deviation from linear of a photodiode’s responsivity to a range of input light power levels. Like Dynamic Range, Linearity values vary based on a photodiode’s substrate resistivity (higher resistivity = reduced linearity) and reverse bias voltage (higher bias voltage = improved linearity). It is usually shown by plotting photodiode response vs input light power and determining the plot’s percentage deviation from a straight line.
Mesa construction is a manufacturing process used in the semiconductor industry where the substrate / material is etched producing elevated areas with a flat top. These pillars / device structures stand up above the substrate. This process is usually done to stop parasitic capacitance and increase switching speeds.
The optical power (specified in watts) necessary to create a photocurrent in the photodiode equal to the noise of the photodiode, thereby obtaining a signal-to-noise ratio of 1. NEP is a function of the photodiode’s noise current and responsivity.
The mode of operation of a photodiode in which a reverse bias voltage is applied. Applying a reverse bias voltage will lower the photodiode’s capacitance, provide faster rise and fall times, improve its linearity range and slightly improve responsivity at wavelengths above 950nm for silicon based devices. It also creates dark current which is a factor in noise generation.
A device that is able to sense light levels and alter the current flowing between emitter and collector according to the level of light it receives. Polarity can be PNP or NPN.
The mode of operation of a photodiode in which no reverse bias voltage is applied. With no bias voltage applied, the photodiode’s shunt resistance becomes the dominating factor in noise generation.
The flow of current generated by the photovoltaic effect occurring within a photodiode’s PN junction (active area) in response to incident optical power. Basically, absorbed photons generate free charge carriers that are collected within the device.
A photodiode with a wide, undoped intrinsic region sandwiched between heavily doped p+ and n+ regions. These are built to be used with a reverse bias voltage (photoconductive mode). Marktech’s position for silicon based devices is any photodiode built on N-type silicon with a resistivity greater than 400 ohm-cm is considered a PIN photodiode.
A photodiode without a wide, undoped intrinsic region sandwiched between heavily doped p+ and n+ regions. These are built to be used without a reverse bias voltage (photovoltaic mode). Marktech’s position for silicon based devices is any photodiode built on N-type silicon with a resistivity of 10 to 100 ohm-cm is considered a P-N photodiode. (Also referred to as P on N).
Planar construction is a manufacturing process used in the semiconductor industry which starts with an oxide layer on the semiconductor wafer surface followed by “layers” of doped regions, oxides and metalizations to produce a semiconductor device. The process involves the basic procedures of silicon dioxide (SiO2) oxidation, SiO2 etching and heat diffusion or implanting. The final steps involve oxidizing the entire wafer with a SiO2 layer, etching contact vias down to the active regions, and depositing metalizations.
The percentage of incident photons that generate electrons and holes that result in the photodiode producing a photocurrent. QE varies with wavelength and to a slight degree improves at some wavelengths with reverse bias voltage.
The measure of how strongly a semiconductor material opposes electrical flow. It is expressed in ohm-cm and is proportional to the concentration of carriers inherent in the silicon (or other starting material) wafers from which the photodiodes are fabricated.
The ratio of the photdiode’s output current (in amperes) to the input light power (in watts). Responsivity is directly related to Quantum Efficiency and like it, varies with wavelength and to a slight degree improves at some wavelengths with reverse bias voltage. (Also referred to as Sensitivity).
The time required for the output current of an illuminated photodiode to rise from 10% to 90% of its fully “on” level in response to an “on” level in input light power. Accurate measurement requires that the light source turn on faster than the photodiode.
The input optical power level at which an increase in input optical power no longer produces an increase in the photodiode’s current output. This can occur when the input optical power becomes too high for the entire photodiode or when the input optical power’s concentration is too high for the region of the photodiode being illuminated to convert it. There is a range of input optical power between the end of the dynamic range and the beginning of saturation that is known as the non-linear range.
Noise related to the statistical fluctuation in both the photocurrent and the dark current. It is the dominant noise factor in the photoconductive mode.
The shunt resistance is the voltage-to-current ratio in the vicinity of 0V. Since current cannot be measured at 0V, shunt resistance is determined by measuring the dark current at +10mV and -10mV, and using Ohm’s law, calculating the resistance.
A photodiode built on silicon. Polarity can be P on N or N on P. It can respond to wavelengths from 200nm to 1100nm depending of fabrication enhancements.
Do you need a small number of LEDs for your proof of concept? Or, are you looking to purchase a run for your prototypes? Visit our online stores at Digi-Key Electronics and Mouser Electronics today. In Japan, our products are now available through Rikei Corporation. In Israel, our products are now available through Militram. In Canada, our products are now available through ARL Group.
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Marktech Optoelectronics is one of the world’s leading manufacturers of UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters and photodiode detectors. The company also engineers and manufactures materials such as silicon photodetector wafers, chips, and InP epiwafers.
Marktech Optoelectronics
3 Northway Lane North
Latham, NY 12110
Fax: +1-785-4725
Email: info@marktechopto.com